NTDN/D. NTDN, NVDN. Power MOSFET. 30 V, 54 A, Single N− Channel, DPAK/IPAK. Features. • Low RDS(on) to Minimize Conduction Losses. SIDY Transistor Datasheet, SIDY Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. AOC Transistor Datasheet, AOC Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog.
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Welsh startup backed to make energy harvest PMIC. The devices are suitable for battery pack applications where two n-channel MOSFETs are connected back-to-back for safe charging and discharging as well as voltage protection. ST 481 Atomera manufacturing technology.
Sending feedback, please wait Typical Turn-Off Delay Time. Maximum Continuous Drain Current.
Maximum Gate Source Voltage. Minimum Gate Threshold Voltage. Technology News Oct 09, Maximum Continuous Drain Current. RoHS Certificate of Compliance.
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Inpho Venture Summit to highlight “deeptech”.
Skip to main content. Unlike conventional CSP chip scale packagingthe Micro-DFN eliminates the risk of die chipping by encapsulating the silicon to provide moseft protection to the die as well as providing excellent moisture isolation.
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The products provide ultra-low RSS source-to-source resistance of less than 10mOhms at 10 V gate drive. Maximum Drain Source Resistance.