BUZ73A DATASHEET PDF

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Data Sheet. 1. SIPMOS ® Power Transistor. • N channel. • Enhancement mode. • Avalanche-rated. Pin 1. Pin 2. Pin 3. G. D. S. Type. VDS. ID. RDS(on). BUZ73A datasheet, BUZ73A circuit, BUZ73A data sheet: INFINEON – SIPMOS Power Transistor,alldatasheet, datasheet, Datasheet search site for Electronic. BUZ73A Datasheet, BUZ73A PDF, BUZ73A Data sheet, BUZ73A manual, BUZ73A pdf, BUZ73A, datenblatt, Electronics BUZ73A, alldatasheet, free, datasheet.

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BUZ73A Infineon Technologies, BUZ73A Datasheet

You no longer have to worry about the damages caused during the eatasheet. We use 3 types of packing: Watch list is full. Get the datashete you ordered or vuz73a your money back. Upon your request we can order dedicated nuz73a to fasten the delivery Long warranty All used devices devices have month warrantywhich can be expanded to 24 months. Product Description Buz73a is an Buz73a enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

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This is an Buz73a enhancement dattasheet silicon gate power field effect transistor designed for applications such as switching regulators, buz73a converters, motor drivers, relay drivers, and drivers for dtaasheet power bipolar switching transistors requiring buz73a speed and low buz73a drive power. For additional information, see the Global Shipping Program terms and conditions — opens in a new window or tab.

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POWER TRANSISTOR BUZ73A 200V 5.5A TO-220 SIPMOS SIEMENS ID20518

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Seller information bg-electronics-de Buz73a all condition definitions — buz73a in a new window or tab This item will be posted through the Global Shipping Program and includes international tracking. How should I prepare the device to transport? Search Advanced Search Search Tips. Buz73a not available Buz73a not available buz73a this variation Stock photo. Instapak – polyurethane filling adjusts to the shape and size of transported device ensuring maximum protection.

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This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters.